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Advance Product Information
March 4, 2005
32 dBm Ku-Band Amplifier
Key Features
* * * * * * *
TGA2503-SM
Typical Frequency Range: 12.5 - 16 GHz 32 dBm Nominal Psat 32 dB Nominal Gain 37 dBm Output TOI @ Pin = -20dBm 8 dB Typical Return Loss Bias Conditions: Vd = 6V, Idq = 600 mA (Id = 1200mA under RF drive) Package Dimensions: 4.0 x 4.0 x 0.9 mm
Primary Applications
* * Ku-Band VSAT Point-to-Point Radio
Product Description
The TriQuint TGA2503-SM is a Ku-Band Packaged Power Amplifier. The TGA2503-SM operates from 12.5-16 GHz and is designed using TriQuint's proven standard 0.5-um power pHEMT production process. The TGA2503-SM typically provides 32 dBm of saturated output power with small signal gain of 32 dB. The TGA2503-SM is ideally suited for the VSAT ground terminal market and Pointto-Point Radio. Evaluation Boards are available upon request. Lead-free and RoHS compliant
36 32 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 12.5
Measured Performance
Bias Conditions: Vd = 6 V, Idq = 600 mA
24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 -32 15 15.5 16
Gain
Output
Input
13
13.5
14
14.5
Frequency (GHz)
34
Saturated Output Power (dBm)
32 30 28 26 24 22 20 12.5
13
13.5
14
14.5
15
15.5
16
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice.
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Return Loss (dB)
Gain (dB)
Advance Product Information
March 4, 2005 TGA2503-SM
TABLE I MAXIMUM RATINGS Symbol
V+ V
-
Parameter 1/
Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Value
8V -5V to 0V 1.3 A 18 mA 21 dBm See note 3 150 C 260 C -65 to 150 C
Notes
2/ 2/ 2/ 2/ 3/ 4/ 5/
I+ | IG | PIN PD TCH TM TSTG 1/ 2/ 3/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 C - TBASE C) / 11.7 (C/W) These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
4/ 5/
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
TABLE II RF CHARACTERIZATION TABLE
(TA = 25qC, Nominal) Bias Conditions: Vd = 6V, Idq = 600mA
March 4, 2005 TGA2503-SM
SYMBOL
PARAMETER
TEST CONDITION
NOMINAL *
UNITS
Gain
Small Signal Gain
f = 12.5 - 16 GHz
32
dB
IRL
Input Return Loss
f = 12.5 - 16 GHz
10
dB
ORL
Output Return Loss Noise Figure
f = 12.5 - 16 GHz
8
dB
NF
f = 12.5 - 16 GHz f = 12.5 - 16 GHz f = 13.75 - 14.5 GHz f = 12.5 - 16 GHz
9 31 32 36
dB
Psat
Saturated Output Power Third Order Intercept @ Pin = -20dBm
dBm
TOI
dBm
* Note: All measured data is taken using connectorized evaluation boards. The reference plane is at RF connectors, and hence connector and board loss has not been deembedded.
TABLE III THERMAL INFORMATION PARAMETER
Rjc Thermal Resistance (Channel to package)
TEST CONDITION
VD = 6 V ID = 600 mA PDiss= 3.6 W
TCH (qC)
127
RTjc MTTF (qC/W) (HRS)
11.7 7.9 E+6
Note: Backside of package is at 85 C baseplate temperature. Worst case is at saturated output power when DC power consumption rises to 7.2 W with 1.5 W RF power delivered to load. Power dissipated is 5.7 W and the temperature rise in the channel is 67 C. Baseplate temperature must be reduced to 83 C to remain below the 150 C maximum channel temperature.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005 TGA2503-SM
Measured Performance*
Bias Conditions: Vd = 6 V, Idq =600 mA
36 32 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 11
14 13
Gain
Output
Input
24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 -32 15 16 17 18
12
13
14
Frequency (GHz)
Noise Figure (dB)
12 11 10 9 8 7 6 12 13 14 15 16 17 18
Frequency (GHz)
* Note: All measured data is taken using connectorized evaluation boards. The reference plane is at RF connectors, and hence connector and board loss has not been deembedded.
4
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Return Loss (dB)
Gain (dB)
Advance Product Information
March 4, 2005 TGA2503-SM
Measured Performance
Bias Conditions: Vd = 6 V, Idq =600 mA
40 36 32 28
Gain (dB)
24 20 16 12 8 4 0 11 12 13 14 15 16 17 18
-40C 25C 70C
Frequency (GHz)
0 -3
-6 -9 -12 -15 -18 -21 -24 -27 -30 11 12 13 14 15 16 17
18
Output Return Loss (dB)
Input Return Loss (dB)
-40C 25C 70C
0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 -14 11 12 13 14 15 16
-40C 25C 70C
17
18
Frequency (GHz)
Frequency (GHz)
* Note: All measured data is taken using connectorized evaluation boards. The reference plane is at RF connectors, and hence connector and board loss has not been deembedded.
5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005 TGA2503-SM
Measured Performance
Bias Conditions: Vd = 6 V, Idq = 600 mA
35
1400 1300
Pout Gain
Pout (dBm) & Gain (dB)
30 25 20 15 10 5 0 -16
34
@ 14 GHz Id
1100 1000 900 800 700 600 500 -12 -8 -4 0 4 8 12 16
Input Power (dBm)
Saturated Output Power (dBm)
32 30 28 26 24 22 20 12 13 14 15 16 17 18
Frequency (GHz)
* Note: All measured data is taken using connectorized evaluation boards. The reference plane is at RF connectors, and hence connector and board loss has not been deembedded.
6
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Drain Current (mA)
1200
Advance Product Information
March 4, 2005 TGA2503-SM
Measured Performance
Bias Conditions: Vd = 6 V, Idq =600 mA
38
Output TOI (dBm) @ Pin/tone= -20dBm
36 34 32 30 28 26 24 22 20
12
13
14
15
16
17
18
Frequency (GHz)
18 12 6 0 -6 -12 -18 -24 -30 -36 -42 -48 -54 -60 6 8 10 12 14 16 18 20 22 24 26 28 30
IM3 (dBm)
Output Power/tone (dBm)
12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 17 GHz
* Note: All measured data is taken using connectorized evaluation boards. The reference plane is at RF connectors, and hence connector and board loss has not been deembedded.
7
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005 TGA2503-SM
Package Pinout Diagram

TGA 2503 Date Code Lot Code

Top View
Dot indicates Pin 1
Bottom View
Pin
1, 2, 4, 5, 6, 7, 9, 11, 13, 14, 15, 17, 18, 20, 22, 24 3 8 10 12 16 19 21 23 25
Description
N/C RF Input Vg1 Vg2 Power Ref RF Output Vd2 Vd1 Ref Gnd
8
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005 TGA2503-SM
Mechanical Drawing
3,1 ,' %RWWRP 9LHZ 7ROHUDQFH 8QLWV PP [ PP *URXQG 3DG
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
9
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005 TGA2503-SM
Recommended Board Layout Assembly *
S) 9G 9
S)

7XQLQJ 6WXE

S)
S)
9G a9 WR REWDLQ P$ GUDLQ FXUUHQW

7X

Units: mils
* This layout shows the tuning configuration used to obtain the measured data. The layout configuration may vary depending on the specific application. PCB is RO4003 8 mil thickness, 0.5 oz standard copper cladding, with Er = 3.38.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
10
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
March 4, 2005 TGA2503-SM
Recommended Surface Mount Package Assembly
Proper ESD precautions must be followed while handling packages. Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. Clean the assembly with alcohol.
Typical Solder Reflow Profiles
Reflow Profile
Ramp-up Rate Activation Time and Temperature Time above Melting Point Max Peak Temperature Time within 5 C of Peak Temperature Ramp-down Rate
SnPb
3 C/sec 60 - 120 sec @ 140 - 160 C 60 - 150 sec 240 C 10 - 20 sec 4 - 6 C/sec
Pb Free
3 C/sec 60 - 180 sec @ 150 - 200 C 60 - 150 sec 260 C 10 - 20 sec 4 - 6 C/sec
Ordering Information
Part
TGA2503-SM
Package Style
QFN 24L 4x4 Surface Mount
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
11
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

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